预热处理前驱体后硫化温度对Cu_2ZnSnS_4薄膜性能影响的研究

Synthesis and Property Improvement of Cu_2ZnSnS_4 Coatings

用磁控溅射法在玻璃衬底上沉积Zn/Sn/Cu前驱体,在石英管中将前驱体加热到350℃预热处理30 min,再然后用硫粉作为硫源将预热处理后的金属前驱体硫化制成Cu2Zn Sn S4(CZTS)薄膜。研究了不同硫化温度(500,540和580℃)对CZTS薄膜性能的影响。采用X射线衍射、喇曼光普仪、扫描电镜、能谱分析仪、能量散射谱和紫外-可见-近红外分光光度计表征薄膜的物相,表面形貌和光学性能。结果表明,在不同硫化温度下都成功制备了CZTS薄膜,且都具有(112)晶面择优取向。随着硫化温度的升高,薄膜中的晶粒尺寸明显增大,结晶性也有所增大。当硫化温度升高至580℃,所制备的薄膜中晶粒尺寸可达到1μm以上。在不同硫化温度下所制备薄膜的禁带宽度都接近1.5 e V。

Preheated at 350℃ for 30min, the rnagnetron co-sputtered Zn/Sn/Cu precursors on glass substrate were sulfurized with S powder. The influence of the sulfurization temperature on the properties and electronic structures of the Cu2ZnSrtS4（CZTS） coatings was investigated. The micmstmctures, phase-structures, and optical properties of the coatings were characterized with X-ray diffraction, scanning electron microscopy, Raman spectroscopy, energy dispersive spectroscopy, and UV-Vis-NIR spectrometer. The preliminary results show that the preheating and sulfurization temperature strongly affect the grain size and band-gap of the single phased, （112） preferentially oriented CZTS coatings. For exampie,as the temperature increased from 500 to 580℃, the gain size grew up to 1μm with improved erystallinity; and its band-gap widened from 1.47 to 1.53 eV. Keywords Magnetmn sputtering, CZ1S film, Pretreatment, Sulfurization temperature