摘要
Tbx（Ni0.8Fe0.2）1-x films with x ≤ 0.14 are fabricated and the anomalous Hall effect is studied. The intrinsic anomalous Hall conductivity and the extrinsic one from the impurity and phonon induced scattering both increase with increasing x. The enhancement of the intrinsic anomalous Hall conductivity is ascribed to both the weak spin–orbit coupling enhancement and the Fermi level shift. The enhancement of the extrinsic term comes from the changes of both Fermi level and impurity distribution. In contrast, the in-plane and the out-of-plane uniaxial anisotropies in the Tb Ni Fe films change little with x. The enhancement of the Hall angle by Tb doping is helpful for practical applications of the Hall devices.
Tbx（Ni0.8Fe0.2）1-x films with x ≤ 0.14 are fabricated and the anomalous Hall effect is studied. The intrinsic anomalous Hall conductivity and the extrinsic one from the impurity and phonon induced scattering both increase with increasing x. The enhancement of the intrinsic anomalous Hall conductivity is ascribed to both the weak spin–orbit coupling enhancement and the Fermi level shift. The enhancement of the extrinsic term comes from the changes of both Fermi level and impurity distribution. In contrast, the in-plane and the out-of-plane uniaxial anisotropies in the Tb Ni Fe films change little with x. The enhancement of the Hall angle by Tb doping is helpful for practical applications of the Hall devices.
基金
Project supported by the National Natural Science Foundation of China(Grant Nos.11374227,51331004,51171129,and 51201114)
the Shanghai Science and Technology Committee,China(Grant Nos.0252nm004,13XD1403700,and 13520722700)
the National Basic Research Program of China(Grant No.2015CB921501)
