摘要
Double perovskite oxide Sr2 Co Fe O6（SCFO） has been obtained using a high-pressure and high-temperature（HPHT）synthesis method. Valence states of Fe and Co and their distributions in SCFO were examined with X-ray photoelectron spectroscopy. The electric transport behavior of SCFO showed a semiconductor behavior that can be well described by Mott＇s law for variable-range hopping conduction. The structural stability of SCFO was investigated at pressures up to 31 GPa with no pressure-induced phase transition found. Bulk modulus B0 was determined to be 163（2） GPa by fitting the pressure–volume data to the Birch–Murnaghan equation of state.
Double perovskite oxide Sr2 Co Fe O6（SCFO） has been obtained using a high-pressure and high-temperature（HPHT）synthesis method. Valence states of Fe and Co and their distributions in SCFO were examined with X-ray photoelectron spectroscopy. The electric transport behavior of SCFO showed a semiconductor behavior that can be well described by Mott＇s law for variable-range hopping conduction. The structural stability of SCFO was investigated at pressures up to 31 GPa with no pressure-induced phase transition found. Bulk modulus B0 was determined to be 163（2） GPa by fitting the pressure–volume data to the Birch–Murnaghan equation of state.
基金
Project supported by the National Natural Science Foundation of China(Grant Nos.51172194 and 51172091)
the Program for New Century Excellent Talents in University,China(Grant No.NCET-12-0240)
Jilin Province Science and Technology Development Program,China(Grant No.20130101023JC)
