Rf-PECVD制备Si掺杂DLC薄膜性能的研究

Study on the Properties of DLC Films with Si Doping Prepared by Rf-PECVD

为了改善类金刚石(DLC)薄膜的应力和热稳定性,采用射频等离子体增强化学气相沉积(RF-PECVD)技术,通过在原有设备上加入与流量控制器相连的双起泡器,并以氩气为运载气体,正丁烷为反应物,在硅基底上实现了以液态物质四甲基硅烷(TMS)为前驱物的Si掺杂类金刚石薄膜的沉积。硬度、应力、表面粗糙度及热稳定性的测试表明,随着运载气体流量的增加,薄膜的应力分布、表面粗糙度和热稳定性都有很大程度的改善,但也导致薄膜的硬度下降,当运载气体的流量为30 m L/min(标准状态)时,Si掺杂DLC薄膜的石墨化温度可以达到600℃以上,薄膜的应力降低为0.65 GPa,表面粗糙度降低到0.566 nm,但硬度下降为12.6 GPa。

Absrtact In order to improve the stress and the thermal stability of diamond like carbon （DLC） film, by adding two bubblers connected to mass flow controller into the improvement of the radio frequence plasma enhanced chemical vapor deposition （RF-PECVD） equipment, the DLC films with Si doping prepared by Rf-PECVD technology with CH4 as the reactants, liquid tetra methyl silane （TMS） as the reaction precurs and Ar as the carrier gas. The measurements of the stress, the hardness, roughness and the thermal stability demonstrate that the stress, roughness and the thermal stability of the DLC films doped Si are improved at a certain degree with the increase of the flow rate of the carrier gas, but the hardness decreases obviously, as the flow rate of the carrier gas is equal to 30 mL/min （standard state）, the stress decreases to 0.65 GPa and the temperature of graphitization increases to more than 600℃, the roughness of the surface is decreased to 0.566 nm, but the hardness decreases to 12.6 GPa. Key words thin films; diamond like carbon; stress; thermal stability