ZnO基电阻存储材料的研究与进展

Recent Progress in Resistance Memory of ZnO Based Materials

在电阻存储技术的快速发展中,电阻存储材料是其发展的关键基础。因此探索新型、高效、环保的电阻存储材料是推进电阻存储技术发展的研究热点。ZnO自身具备优异的光学特性,结合可调控的电学、磁学特性,被誉为最有应用潜力的电阻存储材料。扼要介绍了ZnO基电阻存储材料的研究概况,结合大数据时代信息存储的背景回顾了ZnO基存储材料的研究进展、物理机制,对以往的研究工作进行了归纳与总结,并阐述了未来的发展趋势。

With the development of resistance memristor,exploring cheap and green memory material has attracted intense attention.As an important semiconductor,ZnO has been considered as the most important candidate for resistance memory due to its excellent optical character as well as its adjustable electrical and magnetic properties.Herein the recent progress of resistive switching effect in ZnO is systematically introduced.This summary is hoped to be an intelligible introduction for those who will contribute to the research field.