基于硅雪崩光电二极管的双光子吸收实验(英文)

Experimental investigation on two-photon absorption in silicon avalanche photodiode

研究了硅雪崩光电二极管(APD)对光通信波段近红外光子在不同频率、强度,以及APD不同偏压下的双光子吸收效应(TPA)。通过实验详细测量了光频率从186.3 THz到196.1 THz变化时APD的TPA效率,结果表明:随着入射光频率的不断增加,TPA效率呈现出先增大、后减小的规律,并且在190.5 THz附近达到最优效率。此外,在实验中观察到,随着入射光强的增大,TPA效率也呈现出先增大、后减小的现象(此实验中的峰值光强度约10 mW)。

Two-photon absorption（TPA） in Si avalanche photodiode（APD） was investigated for infrared photon in 1550-nm telecom band with different frequencies,intensities,under different bias voltage.By measurement of the TPA efficiency for photon frequency from 186.3 to 196.1 THz in detail,it was found that it decreases when the photon frequency goes up while a certain optimal TPA efficiency is around190.5 THz for the APD under test.It can be observed from the experiments that the TPA efficiency increases until a certain intensity（The peak value of light intensity in this experiment is less than 10 mW）and then it decreases.