Mn掺杂对0.7BiFeO_3-0.3PbTiO_3薄膜铁电性能的影响

Effects of Mn Doping on Ferroelectric Properties of 0.7BiFeO_3-0.3PbTiO_3 Thin Films

利用溶胶-凝胶法在La Ni O3/Si O2/Si衬底上制备了掺Mn量为0%、1%、5%、10%（质量分数）的0.7Bi Fe O3-0.3Pb Ti O3（BFMPT7030/x,x=0,0.01,0.05,0.1）薄膜。XRD测试表明,薄膜均完全结晶,呈现高度（100）择优取向。通过对薄膜晶体结构分析,发现BFMPT7030/0.05薄膜具有最小的晶粒尺寸（258 nm）及最小的晶胞体积（61.25×10-3 nm3）。SEM测试结果显示样品晶粒生长充分,晶粒尺寸在150~300 nm之间。铁电性能测试结果表明,当Mn含量为5%时,铁电性能较好,电滞回线形状最好,最为饱和。漏电流测试结果表明随着掺Mn量增加,BFMPT7030薄膜的漏电流随电场增大而增加的趋势减弱。

0.7BiFeO3-0.3PbTiO3 thin films with 0%, 1%, 5%, 10 % Mn doping （BFMPT7030/x, x=0, 0.01, 0.05, 0.1） were prepared on LaNiO3/SiO2/Si substrates by a sol-gel process. XRD results indicate that the films are completely crystallized and present highly （100） preferred orientation. Crystalline structure analyses of the thin films reveal that BFMPT7030/0.05 thin film has the smallest grain size （258 nm） and the smallest cell volume （61.25×10^-3 nm3）. SEM results show that the crystalline grains are fully grown up and the grain size is between 150-300 nm. The BFMPT7030 thin film with 5% Mn doping demonstrates good ferroelectric properties and a saturated hysteresis loop is observed. The leakage current tests show that with increasing of Mn content, the increasing tendency of the leakage current becomes slow as electric field increases.