光电探测器薄膜生长条件及机理分析

Growth conditions and mechanism of photoelectric detector film

将苝四甲酸二酐(3,4,9,10-perlenetetracrboxylic dianhydride,PTCDA)真空蒸发到无机半导体p-Si衬底上,研制的p-Si/PTCDA异质结光电探测器,对光照非常敏感,是一种响应度很高的宽带光电子元器件。讨论分析了不同的衬底制备条件制备p-Si/PTCDA异质结薄膜的情况,实验结果表明,制备过程中细微的环境变化,显著影响了器件质量,通过分析成膜质量与器件内部微观机制、能带结构、载流子输运之间的关系,确定制备异质结有机薄膜的硅晶面选择,以及衬底的温度最佳的选择范围。

Heterojunction photodetector of PTCDA deposited on the inorganic semiconductor of p- Si, which is very sensitive to light, is a response to a high degree of broadband optoelectronic components. The substrate-prepared p-Si/PTCDA heterojunction thin films under different preparation conditions are discussed. Experimental results show that preparation of minor environmental changes during the process significantly influences the device quality. The selection of silicon crystal face and substrate temperature of preparative heterojunction organic thin film is decided by analyzing the relationship between film quality and the device internal micro mechanism, energy band structure, carrier transport.