摘要
The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator（SOI） devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in Si O2 near back Si O2/Si interface by phosphorus ions implantation can offset positive trapped charges near the back-gate interface. The implanted high concentration phosphorus ions can greatly reduce the back-gate effect of a partially depleted SOI NMOS device, and anti-total-dose radiation ability can reach the level of 1 Mrad（Si） for experimental devices.
The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator（SOI） devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in Si O2 near back Si O2/Si interface by phosphorus ions implantation can offset positive trapped charges near the back-gate interface. The implanted high concentration phosphorus ions can greatly reduce the back-gate effect of a partially depleted SOI NMOS device, and anti-total-dose radiation ability can reach the level of 1 Mrad（Si） for experimental devices.
基金
Project supported by the Major Fund for the National Science and Technology Program,China(No.2009ZX02306-04)
the Fund of SOI Research and Development Center(No.20106250XXX)
