摘要
A stress modulation technology using a trench-based structure for strained NMOSFET is reported in this paper. With this technology, NMOSFET can be improved by a compressive contact etch stop layer（CESL）, whereas the traditional CESL-strained NMOSFET requires a tensile one. To confirm this idea, a 95-nm-gate device with a 2：5 GPa strained CESL is simulated to investigate the effects of the trench-based structure on channel stress. It is demonstrated that the average longitudinal channel stress is transformed from 333 into 256 MPa, which leads to a significant improvement of the device＇s I–V performance. For strained CMOS, this approach provides a potential alternative besides dual stress liner technology.
A stress modulation technology using a trench-based structure for strained NMOSFET is reported in this paper. With this technology, NMOSFET can be improved by a compressive contact etch stop layer（CESL）, whereas the traditional CESL-strained NMOSFET requires a tensile one. To confirm this idea, a 95-nm-gate device with a 2：5 GPa strained CESL is simulated to investigate the effects of the trench-based structure on channel stress. It is demonstrated that the average longitudinal channel stress is transformed from 333 into 256 MPa, which leads to a significant improvement of the device＇s I–V performance. For strained CMOS, this approach provides a potential alternative besides dual stress liner technology.
基金
Project supported by the Innovative Fund of State Key Laboratory of Electronic Thin Films and Integrated Devices(No.CXJJ201103)
the Fund of Analog Integrated Circuit Key Laboratory(No.9140C090301120C09035)
the Scientific Research Project of Land and Resources Department of Sichuan Province(No.KJ-2013-12 2200199)
