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A 3 Gb/s multichannel transceiver in 65 nm CMOS technology

A 3 Gb/s multichannel transceiver in 65 nm CMOS technology
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摘要 This paper describes a 65 nm 16-bit parallel transceiver IP macro, whose rate is 3 Gb/s with a 5 p F load including the HBM 2000 V ESD protection. Equalizers and clock data recovery modules, CRC checkers and8 b/10 b encoders are not added in the design for reducing the latency, and the whole latency is 7 ns without cables.Since the transceiver has many robust features including a process, voltage and temperature independent phaselocked loop with calibrations, the low skew differential clock tree, and a stable current mode driver with common mode feedback, the transceiver can work properly at different process corners and extreme temperatures, and also can tolerate 20% power supply variations. The transceiver can be applied for the interface of sub-100 nm high performance processors, which require low latency and high stability. The transceiver shows a bitter error ratio of less than 10^-15 at 3 Gbps. This paper describes a 65 nm 16-bit parallel transceiver IP macro, whose rate is 3 Gb/s with a 5 p F load including the HBM 2000 V ESD protection. Equalizers and clock data recovery modules, CRC checkers and8 b/10 b encoders are not added in the design for reducing the latency, and the whole latency is 7 ns without cables.Since the transceiver has many robust features including a process, voltage and temperature independent phaselocked loop with calibrations, the low skew differential clock tree, and a stable current mode driver with common mode feedback, the transceiver can work properly at different process corners and extreme temperatures, and also can tolerate 20% power supply variations. The transceiver can be applied for the interface of sub-100 nm high performance processors, which require low latency and high stability. The transceiver shows a bitter error ratio of less than 10^-15 at 3 Gbps.
作者 张锋 邱玉松
出处 《Journal of Semiconductors》 EI CAS CSCD 2015年第1期150-157,共8页 半导体学报(英文版)
基金 Project supported by the National High Technology Research and Development Program of China(No.2011AA010403) the National Natural Science Foundation of China(No.61474134)
关键词 transceiver process variation low latency PLL transceiver process variation low latency PLL
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  • 1Beigne E, Vivet P. Design of on-chip and off-chip interfaces for a GALS NoC architecture. IEEE International Symposium on Asynchronous Circuits and Systems, 2006:174.
  • 2Stackhouse B, Cherkauer B, Gowan, M, et al. A 65 nm 2-billion transistor quad-core processor. IEEE International Solid State Circuits Conf, 2008:92.
  • 3Jung H K, Lee K, Kim J S, et al. A 4 Gbps 3-bit parallel transmit- ter with the crosstalk-induced jitter compensation using TX data timing control. IEEE Asian Solid-State Circuits Conf, 2008:201.
  • 4Abe T, Yuan Y, Ishikuro H, et al. A 2 Gb/s 150 mW UWB direct- conversion Cherent transceiver with IQ-switching carrier recov- ery scheme. IEEE International Solid State Circuits Conf, 2012: 442.
  • 5Liu Y, Huang X, Vidojkovic M, et al. A 1.9 nJ/b 2.4 GHz multistandard (Bluetooth Low Energy/Zigbee/IEEE802.15.6) transceiver for personal/body-area networks. IEEE International Solid State Circuits Conf, 2013:446.
  • 6Zhang L W, Jiang H J, Wei J J, et al. A reconfigurable sliding-IF transceiver for 400 MHz/2.4 GHz IEEE 802.15.6/ZigBee WBAN hubs with only 21% tuning range VCO. IEEE J Solid-State Cir- cuits, 2013, 48(11): 2705.
  • 7Grasser T, Kaczer B, Goes W, et al. The paradigm shift in under- standing the bias temperature instability: from reaction-diffusion to switching oxide traps. IEEE Trans Electron Devices, 2011, 58(11): 3652.
  • 8Ang D S, Teo Z Q, Ho T J, et al. Reassessing the mech- anisms of negative-bias temperature instability by repetitive stress/relaxation experiments. IEEE Trans Device Mater Reliab, 2011, 11(1): 22.
  • 9Hsieh C Y, Yang C Y, Chen K H. A low-dropout regulator with smooth peak current control topology for overcurrent protection. IEEE J Solid-State Circuits, 2010, 25(6): 1388.
  • 10Tajalli A, Leblebici Y. A slew controlled LVDS output driver cir- cuit in 0.18μm CMOS. IEEE J Solid-State Circuits, 2009, 44(2): 540.

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