摘要
按化学计量比并富P2%配料,通过改进的单温区合成法合成出高纯、单相的ZnGeP2多晶原料,在无磁场、6 T匀强磁场和上、下梯度磁场条件下,使用坩埚下降法成功生长出ZnGeP2单晶。研究表明,施加6 T匀强磁场和上、下梯度磁场后,ZnGeP2晶体依次沿(116)、(112)和(220)取向,与无磁场下晶体取向不同;ZnGeP2晶体成分沿纵向方向在强磁场中比无磁场中波动明显;红外透过率在匀强和上梯度磁场中均有明显提高,下梯度磁场中变化不明显;电阻率在匀强和上梯度磁场中有所下降,而下梯度磁场中则有所升高。
High-purity and single-phase ZnGeP2 polycrystal was synthesized by Zn, Ge and red P elements(99. 999% ) according to the stoichiometry of ZnGeP2 with an excess of 2% P through a modified single-temperature zone method. The ZnGeP2 single crystals were grown by Bridgman method in the steady magnetic field as well as upper and lower gradient magnetic field. The results showed that the application of magnetic field altered the growth direction of ZnGeP2 crystal by (116 ) , (112) and (220). The longitudinal composition of ZnGeP2 single crystal also changed obviously under the magnetic field. The infrared transmittance increased under the steady and upper gradient magnetic field and decreased under the lower gradient magnetic field. The electrical resistivity descended under the steady and upper gradient magnetic field while it increased under the lower gradient magnetic field.
出处
《上海金属》
CAS
北大核心
2015年第1期33-38,共6页
Shanghai Metals
基金
国家自然科学基金资助项目(No.51371110)