摘要
In the present work, we measured the forward bias current-voltage （I-V） characteristics of Si-doped n type gallium arsenide （GaAs） heterostructures infrared emitter over a wide temperature range from 350 to 77 K. Results showed that the slopes of the exponential curve changed slowly with temperature. The analysis of the various tunneling mechanisms indicated that the tunneling current varied approximately as a function of - exp（- αEg ＋ βeV） where the parameters α and β varied indistinctively with temperature and voltage tunneling current on the The dependence of forward temperature and bias can be explained by thermally induced band gap shrinkage and bias induced route change respectively. These results will be helpful for application of the optoelectronics device in both high and low temperature ambiences.
In the present work, we measured the forward bias current-voltage （I-V） characteristics of Si-doped n type gallium arsenide （GaAs） heterostructures infrared emitter over a wide temperature range from 350 to 77 K. Results showed that the slopes of the exponential curve changed slowly with temperature. The analysis of the various tunneling mechanisms indicated that the tunneling current varied approximately as a function of - exp（- αEg ＋ βeV） where the parameters α and β varied indistinctively with temperature and voltage tunneling current on the The dependence of forward temperature and bias can be explained by thermally induced band gap shrinkage and bias induced route change respectively. These results will be helpful for application of the optoelectronics device in both high and low temperature ambiences.
