化学气相沉积法制备大尺寸单晶石墨烯的工艺参数研究

Process parameters of large single crystal graphene prepared by chemical vapor deposition

石墨烯作为一种二维sp2杂化碳的同素异形体,具有优良的电学、光学、热学及力学等性质.产业化应用石墨烯要求其具有大的尺寸且性质均一.化学气相沉积法(CVD)的出现为制备大尺寸、高质量的石墨烯提供了可能.本文结合近几年CVD法制备石墨烯的研究进展,综述了影响大尺寸、单晶石墨烯制备的工艺参数,包括衬底选择与预处理、碳源与辅助气体流量调控、腔体温度和压力控制、沉积时间以及降温速率设定等.最后展望了制备大尺寸单晶石墨烯的研究方向.

Graphene, as a two-dimensional sp^2 hybridization allotropicity of carbon element, possesses unique properties of electricity, photology, thermology and mechanics. For industrialization, graphene possessing large dimension and homogeneous property is required. It can be prepared by chemical vapor deposition technology. In this paper, based on the progress of graphene research this year, we summarize the influence factors of graphene preparation, including substrate selection and preprocessing, carbon source and assist gas flow control, chamber temperature, pressure control, cooling rate, and deposition time setting, etc. Finally, we outlook the research direction of preparing the large-dimensional and single crystal graphenes.