摘要
设计了一种新颖的"5+7"分段式结构的R-2R电阻网络。与典型12位R-2R电阻型D/A转换器相比,采用该电阻网络的12位D/A转换器所需并联的MOS开关管数量大为减少,约为前者的1/8,提高了MOS开关管的匹配性。基于2μm SOI CMOS工艺,采用该R-2R电阻网络结构设计了一款±15V电压供电、双基准、12位四通道的D/A转换器,修调后,该D/A转换器DNL和INL典型值分别为0.15LSB和0.27LSB。
A new “5＋7” segmented R-2R resistor network was designed. Compared with the traditional 12-bit D/A converter with a typical R-gR resistor network, the new 12-bit D/A converter with the proposed resistor network needed far less paralleled MOS switches, the required number was about eighth of the former. So the matching of these MOS switches was improved. Based on a 2 lLm SOI CMOS process and the new R-2R resistor network, a 12-bit four-channel D/A converter was designed with ± 15 V power supply and dual reference voltage. After error corrected, the DNL and INL typical values of the D/A converter were 0. 15 LSB and 0. 27 LSB respectively.
出处
《微电子学》
CAS
CSCD
北大核心
2014年第6期727-730,736,共5页
Microelectronics
