电流模驱动型抗EMI LIN驱动器设计

Design of a Current-Mode EMI-Resisting LIN Driver

为了解决现有的电压模驱动型LIN驱动器在抗电磁干扰(EMI)方面的诸多不足,基于电流模驱动,设计了一种抗EMI性能良好的LIN驱动器。电路采用0.5μm 60VBCD工艺制造,依据IEC62132-4标准进行直接功率注入(DPI)仿真[1]。结果表明,在150kHz^1GHz频率范围内,在强度高达5 W的EMI信号下,该驱动器输出信号占空比变化不超过3%,传输延时变化不超过2.4μs。相较于电压模驱动型电路较大的传输延时变化(>10μs)和占空比变化(>23%),设计的驱动器在保持较低电磁辐射(EME)的同时,抗EMI性能得到较大的提高。

To solve some shortcomings of voltage-mode LIN driver in EMI-resisting capacity, a current-mode LIN driver with good EMI-resisting performance was designed. The circuit was fabricated in 0. 5 Itm 60 V BCD process and simulated using direct power injection （DPI） method according to IEC62132-4 standard. Results showed that when the superimposed EMI interference had frequency range from 150 kHz to 1 GHz and power of 5 W, the change of the duty cycle was less than 3 %, and the change of the propagation delay was less than 2.4 μs for the proposed LIN driver. Compared with voltage-mode structure which varied widely in propagation delay （〉10 μs ） and duty cycle （〉 23%）, the EMI-resisting performance of the proposed LIN driver was well improved, while maintaining low EME.