Cu_2ZnSnS_4薄膜的制备及其表征

Preparation and characterization of Cu_2ZnSnS_4 thin films by magnetron sputtering

采用Cu-Zn-Sn三元合金靶,以直流反应磁控溅射原位生长的技术制备Cu2ZnSnS4(CZTS)薄膜材料。采用X线能量色散谱仪、扫描电镜、X线衍射仪、拉曼光谱、紫外可见分光光度计和霍尔效应测试系统对薄膜进行表征。研究结果表明:原位生长的CZTS薄膜的成分呈富铜贫锌,具有均质、致密和平整的形貌,且由贯穿整个薄膜厚度的柱状颗粒组成;薄膜在(112)面呈现出明显的择优取向,均为P型材料且具有器件级载流子浓度;随着溅射功率的升高,薄膜的形貌、结晶性能、电学性质均得到一定程度改善。

Cu2ZnSnS4（CZTS） thin films were produced by reactive magnetron technique using a Cu-Zn-Sn alloy target,and they were characterized by EDS, XRD, SEM, Raman spectrum, optical transmittance and electronic measurement.The results show that the grown films show homogeneous, compact surface morphology, and consist of large columnar grains throughout thickness. The grown films exhibit strong preferential orientation along（112） plane, the conduction type of the CZTS films is p-type and the carrier concentration is comparable with values for device quality. The morphology, crystallization properties and electrical properties of the thin film are improved with the increase of sputtering power.