摘要
尽管第5代IGBT已经成为电力电子行业的主流产品,但是却始终未能实现国产自给,主要原因是核心技术未能实现自主化。本文针对生产第5代IGBT的3项核心技术,即沟槽技术、场截止技术和薄片键合技术分别进行阐述和分析,3项技术的难点分别体现在沟槽形貌控制、深埋层的制备以及键合方式的选择和实施。逐一突破3项技术将为先进IGBT的国产化铺平道路。
Although Gen-5 IGBT already become the main product dominating the electric electronic area in China, few of them are manufactured by ourselves due to lack of core technology. This paper provides analyses of three essential issues of the Gen-5 IGBT technology, i. e., trench etching, field stop（ FS） and temporary bonding（ TWB）, revealing respective bottlenecks to be shape controlling, FS layer forming, and method choice and operation. Manufacturing of the advanced IGBT in China will be realized once the three essential issues have been found their solutions.
出处
《东方电气评论》
2014年第4期1-3,10,共4页
Dongfang Electric Review
关键词
IGBT
沟槽
场截止
薄片键合
IGBT
trench
field stop
thinner wafer bonding
