利用MOCVD在Si衬底上制备立方相Mg_(0.25)Zn_(0.75)O薄膜及日盲探测器

Cubic Phased Mg_(0. 25)Zn_(0. 75)O Films Grown on Si by MOCVD and Solar Blind Photodetectors

采用金属有机化学气相沉积(MOCVD)方法在Si衬底上实现了立方结构的Mg0.25Zn0.75O薄膜生长。在此基础上,实现了Mg0.25Zn0.75O/n-Si异质结型日盲紫外探测器。该探测器在-5 V偏压下,器件暗电流为0.02 m A。在0 V偏压下的峰值响应位于大约280 nm处,响应度为1.2 m A/W。

A simple procedure for zero biased solar blind photodetectors was finished based on Mg0.25 Zn0.75 O/ n-Si heterojunetion. The peak responsivity of the detectors was 1.2 mA/W at 280 nm at zero bias. The rejection ratio （R280 m/R400 m） was about one order of magnitude at a reverse bias of 1 V.