BiVO_4晶体的坩埚下降法生长与性能研究

Growth and Properties of BiVO_4 Crystal by Bridgman Method

采用坩埚下降法成功生长出厘米尺寸的单斜相BiVO4晶体并利用X射线衍射仪、偏振光显微镜、接触角测量仪和静电计对其结晶形态、表面畴结构、接触角随光照时间的变化以及电阻率随温度的变化行为进行了研究。发现BiVO4晶体接触角随光照时间呈现先减小后增大的变化规律,同时电阻率随温度升高呈现先增大后减小的正温度系数效应。

BiVO4 single crystal was grown by Bridgman method. The crystal phase,domain structure,contact angle and electrical resistivity were characterized by XRD,polarized light microscopy,contact angle measurement and electrical resistivity testing instruments. The results show that light illumination can induce water wettability changes upon the monoclinic phase BiVO4 crystal surface. The BiVO4 crystal presents positive temperature coefficient effect of resitivity.