一种超薄IGBT半导体器件的制造方法

A Method for Manufacturing Ultrathin IGBT Semiconductor Devices

使用了一种超薄IGBT半导体器件的制造方法。由于减薄后片子承受外部压力的能力减弱，通过使用挡片和光刻胶粘附的方法，有效降低了薄片产品的碎片率。文中从研发和生产的角度考虑，通过小批量生产投入，验证该工艺方法在实际生产中是切实可行的。

A thin-IGBT semiconductor device manufacturing method is used. A method for manufacturing ultrathin IGBT semiconductor devices is paper designsed. Because of reduced ability to weaken the thin wafer subjected to external pressure,by using the method of adhering dummy wafer and photo resist,Effectively reducing the fragmentation rate of thin wafer. From the R＆D and production point of view, on the basis of the small batch production, verifies that the process is feasible in actual production.