InGaN/GaN岛形量子阱样品透射电镜制样与表征方法

TEM sample preparation and characterization of In GaN / GaN quantum wells on island structure

本文研究了氮化物半导体三维岛形结构的透射电镜制样技术,减小了样品在制样过程中的结构损伤,并对In Ga N/Ga N量子阱进行了结构、成分和发光特性的表征。通过对三维Ga N小岛非极性小面微观结构的分析,确定了侧壁小面皆为半极性面,说明小面生长的In Ga N/Ga N量子阱受到较小的极化效应影响。该岛形量子阱的结构特征,有效地增强了量子阱的发光效率,同时由于不同小面的存在,实现了同一小岛的多波长白光发射。

This article studied the TEM sample preparation technique of the 3-D islands structure of Group-III nitride semiconductor materials, which reduced the structural damage in the process of the sample preparation, and characterized the structure, composition and luminescent properties of the InGaN/GaN quantum wells. Through microstructure analysis of nonpolar facets of 3-D GaN islands, It could be confirmed that all the sidewalls facets were half-polar facets, indicating that the InGaN/GaN quantum wells on the facets were affected by the weakening of the polarization effect. The 3？D islands structural characteristics effectively enhanced the quantum wells light-emitting efficiency. What’ s more, due to the existence of different facets, multi-wavelength white light emission of the same island was realized.