Hf/HfO_2基双极阻变存储器研究

Study on Hf / HfO_2 Bipolar Resistive Random-Access-Memory

本文制备了纳米级的Hf/Hf O2基阻变存储器,阻变存储器上电极金属和下电极金属交叉,形成交叉点型的金属-氧化物-金属结构。系统地对其电学特性进行表征,包括forming过程、SET过程和RESET过程。详细研究了该阻变存储器SET电压与RESET电压,高阻态阻值与低阻态阻值间的关联性。该阻变存储器的电学参数与SET过程的电流限制值强相关,因此需要折中优化。利用量子点接触模型对Hf/Hf O2基阻变存储器的开关物理机制进行了分析。

In this paper nanoscale Hf/HfO2 - based resistive random - access - memory （RRAM） devices were fabricated. The cross - over between top electrode and bottom electrode of RRAM forms the metal- oxide -metal sandwich structure. The electrical responses of RRAM are systematically studied, including forming process, SET process and RESET process. The correlations between SET voltage and RESET voltage, high resistance state and low resistance state are discussed. The electrical characteristics of RRAM are in strong relationship with compliance current in SET process. The conduction mechanism of nanoscale： Hf/HfO2 - based RRAM can be explained by quantum point contact model.