多晶硅还原炉内三氯氢硅氢还原过程的数值模拟

Numerical Simulation of Trichlorosilane Hydrogen Reduction Process in Polysilicon Reduction Furnace

建立了多晶硅还原炉内SiHCl3氢还原过程的三维模型,利用CFD软件对炉内的流动、传热和化学反应过程进行了数值模拟,并分析了硅棒高度和硅棒直径对沉积特性的影响。结果表明:随着硅棒高度的增加,SiHCl3转化率、硅产率和硅表面沉积速率不断增大,单位能耗不断减小;从反应的角度来说,硅棒高度越高越好;随着硅棒直径不断增加,SiHCl3转化率和硅产率逐渐增大,硅表面沉积速率先减小、后增大,单位能耗先急剧减小、然后趋于平缓;理论上硅棒直径越大越好,且最好超过120mm。

A three-dimensional model of SHC13 hydrogen reduction process in polysilicon reduction furnace was proposed. The f^ow, heat transfer and chemical reaction process in a reduction furnace were simulated by a CFD software, and the change of deposition characteristic along with silicon rod height and silicon rod diameter was analyzed. The results show that the SiHC13 conversion rate, silicon production rate and silicon growth rate increase and the energy consumption decreases with increasing silicon rod height. Based on the reaction, the higher silicon rod height is hetter. The SiHC13 conversion rate and silicon produc- tion rate increase, the silicon growth rate firstly decreases and then increases, the energy consumption firstly decreases and then becomes stable with the increase of silicon rod diameter. In theory, the greater silicon rod diameter can give the better perform- ance. The optimal silieon rod diameter is 〉120 ram.