非平衡条件下Fe/SiO2/p-Si复合结构的巨磁阻效应(英文)

Giant magnetoresistance in Fe/SiO_2/p-Si hybrid structure under non-equilibrium conditions

研究了基于简单Fe/SiO 2/p-Si结构的2个拼接Schottky二极管的巨磁阻效应。该巨磁阻效应只在光辐照非平衡条件下才显现,且磁阻率可达到100以上。该磁阻效应对经过器件的偏流大小与方向以及磁场极性具有高度依赖性。更重要的是巨磁阻效应只在当子系统中少量电荷载子转移至非平衡状态下时才显现。这种磁敏感装置可为半导体器件开辟一个新的发展方向提供参考。

The giant magnetoresistive（MR） effect was investigated in a simple Fe/Si O2/p-Si-hybrid-structure-based device from two back-to-back Schottky diodes. The effect was revealed only under the non-equilibrium conditions caused by optical radiation. It is demonstrated that the magnetoresistance ratio attains 100 or more. The main peculiarity of the MR behavior is its strong dependence on the magnitude and the sign of the bias current across the device and, most surprisingly, upon polarity of the magnetic field. It is important that the magnetoresistive effect is implemented exclusively in the subsystem of minority charge carriers transferred to the non-equilibrium states. The development of magneto-sensitive devices of this type can give grounds for a novel direction of semiconductor spintronics.