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硅太阳电池模型参数计算优化方法 被引量:5

OPTIMIZATION ALGORITHM FOR SOLVING MODEL PARAMETERS OF SILICON SOLAR CELL
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摘要 在进行光伏发电系统的数字仿真、输出功率预测、运行调度和优化设计时,均需对太阳电池及阵列的电气特性进行精确建模。以硅太阳电池单二极管等效电路模型为基础,运用粒子群算法,提出一种计算模型五参数(Iph、Isat、Rs、Rsh、A)的优化方法,并分析了辐照强度和温度变化对模型参数的影响。该方法仅使用太阳电池生产厂商提供的在标准测试状况下的4个电气参数(Voc、Isc、Vm、Im),便可计算一般工况下的I-V特性曲线。在Matlab中建立仿真模型,仿真与实验结果表明新模型对于I-V曲线的预测误差一般在2%以内。 The reliable and accurate PV model is essential for the digital simulation, output power prediction, operation scheduling and optimization design of PV power systems. Based on the single diode equivalent circuit model of silicon solar cell, an optimization method was proposed by utilizing Particle Swarm Optimization (PSO)to calculate the five circuit parameters (Iph, Isat, RB, RBh, A). The influence of the irradiance variation and cell temperature variation on the model parameters was analyzed. The method could extract the I-V characteristic curve under standard testing condition using only four electrical parameters (V~, I~, Vm, lm) provided by the manufacturing datasheets. The simulation model is set up in Matlab, the comparisons of the simulation curves and experimental curves show that the proposed model has good accuracy and adaptability. The current mean absolute percentage error is less than 2% at standard testing condition.
出处 《太阳能学报》 EI CAS CSCD 北大核心 2014年第12期2413-2419,共7页 Acta Energiae Solaris Sinica
基金 国家重点基础研究发展(973)计划(2009CB219705) 国家自然科学基金(51207040 51307042)
关键词 硅太阳电池 单二极管等效电路模型 I-V特性曲线 粒子群优化算法 silicon solar cell single diode equivalent circuit model I-V characteristic curve particle swarm optimization (PSO)
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参考文献15

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二级参考文献26

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