离子束刻蚀光栅掩模图形转移分析

Simulation and analysis of pattern transfer of ion beam etching grating mask

依据特征曲线法推导出非晶体表面的离子束刻蚀模拟方程;结合全息光栅的刻蚀特点开发出离子束刻蚀模拟程序。模拟程序获得的模拟刻蚀参数可以用于类矩形光栅的刻蚀工艺参数设计,准确地描述不同工艺过程、工艺参数对最终刻蚀结果的影响,进而实现离子束刻蚀过程的可控性和可预知性。

Ion beam etching equation of amorphous surface is deduced based on characteristic curve method .Holographic grating is used to develop the ion beam etching program . Parameters output form the simulation can be applied to the design of trapezoid rectangle grating ,description of etching process and impacts .T he itching process ,therefore ,can be controlled and predicable .