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微波、毫米波GaN HEMT与MMIC的新进展(续) 被引量：3

New Progress of the Microwave and Millimeter Wave GaN HEMT and MMIC(Continued)
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摘要 3 MMIC技术在芯片上由GaN HEMT有源器件和无源元件（如MIM电容、薄膜电阻和衬底上的通孔等）所组成的微波单片集成电路（MMIC）和GaN HEMT分立晶体管几乎同步发展,MMIC技术的发展使GaN HEMT器件的电路应用能减少体积和质量,适应高频率的需求和批量生产。目前4英寸（1英寸=2.54 cm）圆片级GaN MMIC加工线已经成熟,
作者 赵正平
机构地区 中国电子科技集团公司 专用集成电路重点实验室
出处 《半导体技术》 CAS CSCD 北大核心 2015年第2期81-88,共8页 Semiconductor Technology
关键词 有源器件 薄膜电阻 GaN HEMT MMIC 无源元件 输出功率 圆片 通孔 低噪声放大器 批量生产
分类号 TN386 [电子电信—物理电子学] TN43 [电子电信—微电子学与固体电子学]
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参考文献56

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同被引文献27

  • 1赵正平.九十年代GaAs微电子的发展[J].半导体技术,1995,11(4):11-16. 被引量：1
  • 2周卫,刘道广,严利人.SiGe HBT的发展及其在微波/射频通讯中的应用[J].微电子学,2006,36(5):552-558. 被引量：5
  • 3WU Yifeng, PARIKH P.High-power GaN HEMTs battle for vacuum-tube territory, http://www.com- poundsemiconductor.net/ csc/ f eatures-details.php? cat= features&-id-24129&key= GaN&type= f, Feb 07,2006.
  • 4CHATTOPADHYAY M K, TOKEKAR S. Thermal model for dc characteristics of algan/gan hemts inclu- ding self-heating effect and non-linear polarization[J]. Microelectronics Journal, 2008, 39:1181-1188.
  • 5VITANOV S,PALANKOVSKI V,MAROLDT S,et al.High-temperature modeling of AlGaN/GaN HEMTs[J].Solid-State Electronics,2010,54:1105-1112.
  • 6SADI T, KELSALL R W, PILGRIM N J.Electro- thermal Monte Carlo simulation of submicrometer Si/ SiGe MODFETs[J].IEEE Trans.Electron Devices, 2007, 54:332-339.
  • 7KUZMIK J,JAVORKA P, ALAM A, et al.Investi- gation of self-heating effects in AlGaN-GaN HEMTs[C].2001 International Symposium on Electron De- vices for Microwave and Optoelectronic Applications, New Jersey, 2001, 21-26.
  • 8MENOZZI R,MANA-membreno G A, NENER B D, et al.Temperature*Dependent Characterization of Al- GaN/GaN HEMTs: Thermal and Source/Drain Re- sistances[J].IEEE Transactions on Device and Mate- rials Reliability, 2008,8(2):255-264.
  • 9SIMMS R J T,POMEROY J W,UREN M J,et al. Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy[J].IEEE Transaction on Elec- tron Devices, 2008,55(2):478-82.
  • 10XUDONG T,BONNER R,DESAI T,et al.A 2-D Numerical study of Mocroscale Phase Change Material Thermal Storage for GaN Transistor Thermal Manage- ment[C], 27th IEEE SEMI-THERM Symposium, 2011:27-3.

引证文献3

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半导体技术
2015年 第2期

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