摘要
设计了一种无电阻和运算放大器的带隙基准源来降低带隙基准源电路设计的复杂度。采用自偏置结构来避免设计启动电路和偏置电路,所有的MOS管都工作在亚阈值区域以实现低功耗设计,使得整个电路结构能在1.2 V的低电压下工作,此外采用了由BJT构成的高阶温度补偿电路改善电路的温漂系数。本电路采用SMIC 0.18μm CMOS混合工艺,仿真结果表明,在1.2 V的电源电压下,在-10-110℃之间,基准电压为579 mV,温漂系数仅为8.4×10^-6℃^-1,功耗仅为742 nW,版图面积仅为5.35×10^-9 m^2。
The paper presents a non-resistance and operational amplifiers bandgap reference source to reduce the complexity of the bandgap reference circuit design. Using self-biased design structures to avoid start-up circuit and bias circuit, all the MOS transistor are working in the subthreshold region to achieve low power consumption design, making the whole circuit structure capable of operating at a low voltage of 1.2 V, also adopted by the BJT order temperature compensation circuit composed improve drift coefficient circuit. The circuit uses SMIC 0.18 μm CMOS mixing process, the simulation results show that under 1.2 V supply voltage between-10 ℃ to 110 ℃, the reference voltage is 579 m V, drift coefficient of only 8.4×10^-6℃^-1, the power consumption is only 742 n W.
出处
《电子与封装》
2015年第1期24-27,共4页
Electronics & Packaging
