全息光刻制备808nm分布反馈半导体激光器的光栅

Grating Fabrication of 808 nm Distributed Feedback Semiconductor Laser by Holographic Photolithography

实验优化设计了808 nm分布反馈(DFB)半导体激光器的二级布拉格光栅结构,介绍了808 nm DFB半导体激光器光栅制备的工艺过程。采用全息光刻方法和湿法腐蚀技术在Ga As衬底片上制备了周期为240 nm的光栅图形,全息光刻系统采用条纹锁定技术降低条纹抖动和提高干涉稳定性,腐蚀液中H3PO4、H2O2和H2O的体积比为1:1:10,腐蚀时间为30 s。光学显微镜、扫描电子显微镜(SEM)和原子力显微镜(AFM)测试显示,光栅周期为240 nm,占空比为0.25,深度为80 nm,具有完美的表面形貌及良好的连续性和均匀性。

Second-order Bragg grating structure of 808 nm distributed feedback （DFB） semiconductor laser is designed and optimized. The grating fabrication process of 808 nm DFB semiconductor laser is introduced. The grating with a period of 240 nm is fabricated on GaAs substrate by holographic photolithography and wet etching. In the holographic photolithography system, mole grating and piezoelectric ceramic are used as fringe locked-in system to control optical path and lock fringes. Wet etching solution with 1：1：10 volume ratio of I-t3PO4, It202 and H20 is adopted to etch the grating for 30 s. Images of optical microscopy, scanning electron microscopy （SEM） and atomic force microscopy （AFM） show that the grating has a period of 240 nm, duty cycle of 0.25, depth of 80 rim, with perfect surface morphology, good fringe continuity and uniformity.