摘要
Free-standing metallic nanostructures are considered to be highly relevant to many branches of science and technology with applications of three dimensional metallic nanostructures ranging from optical reflectors,actuators,and antenna,to free-standing electrodes,mechanical,optical,and electrical resonators and sensors.Strain-induced out-of-plane fabrication has emerged as an effective method which uses relaxation of strain-mismatched materials.In this work,we report a study of the thermal annealing-induced shape modification of free-standing nanostructures,which was achieved by introducing compositional or microstructural nonuniformity to the nanowires.In particular gradient,segmented and striped hetero-nanowires were grown by focused-ion-beam-induced chemical vapor deposition,followed by rapid thermal annealing in a N2 atmosphere.Various free-standing nanostructures were produced as a result of the crystalline/grain growth and stress relief.
Free-standing metallic nanostructures are considered to be highly relevant to many branches of science and technology with applications of three dimensional metallic nanostructures ranging from optical reflectors, actuators, and antenna, to free-standing electrodes, mechanical, optical, and electrical resonators and sensors. Strain-induced out-of-plane fabrication has emerged as an effective method which uses relaxation of strain-mismatched materials. In this work, we report a study of the thermal annealing-induced shape modification of free-standing nanostructures, which was achieved by introducing composi- tional or microstructural nonuniformity to the nanowires. In particular gradient, segmented and striped hetero-nanowires were grown by focused-ion-beam-induced chemical vapor deposition, followed by rapid thermal annealing in a N2 atmosphere. Various free-standing nanostructures were produced as a result of the crystalline/grain growth and stress relief.
基金
supported by the Outstanding Technical Talent Program of the Chinese Academy of Sciences
the National Natural Science Foundation of China(Grant Nos.91123004,11104334,50825206,10834012 and 60801043)
