钼缓冲层对钼/铜叠层结构电极特性的影响

Effects of Mo Buffer Layer on Properties of Mo/Cu Electrode Stack

采用直流磁控溅射方法制备了钼/铜叠层结构电极,其电阻率达到2.28μΩ·cm,显著低于铝钕合金的电阻率;金属钼作为缓冲层,提高了铜电极在玻璃上的附着力;钼作为阻挡层有效地阻挡了铜向非晶硅中的扩散,避免了铜对于薄膜晶体管有源层的影响。采用这种结构的电极作为大尺寸高分辨平板显示器的扫描线和数据线有望缓解信号延迟的问题。

The Mo/Cu electrode stack,with a resistivity （2.28μΩ cm） much lower than that of the conventional A1/Nd alloy films, was deposited by DC magnetron sputtering on glass substrates. The impacts of the deposition condi- tions, including the Mo buffer layer thickness, pressure, and annealing temperature, on properties of the Mo/Cu electrode stack were evaluated. The results show that the Mo buffer layer significantly increased the adhesion at the Cu/glass inter- face, effectively blocked diffusion of Cu into the amorphous Si film, and markedly eliminated the bad influence of Cu dif- fusion on the active layer of a thin film transistor. We suggest that the use of stack structured Mo/Cu electrode, as the scan and data lines in fabrication of ultra-large sized, high resolution flat panel displays, may be a solution to the signal delay problem.