能量过滤磁控溅射技术室温制备ITO膜的光电特性及其应用

Properties and Application of Indium-Tin-Oxide Coatings Deposited by Energy Filtering Magnetron Sputtering at Room Temperature

利用在直流反应磁控溅射（DMS）技术基础上改进的能量过滤磁控溅射（EFMS）技术制备了1TO薄膜，并将其应用于顶发射有机电致发光器件（TOLED）的阳极。利用x射线衍射、原子力显微镜、椭圆偏振光谱仪和四探针方块电阻测试仪分析了薄膜的结构、表面形貌、光学和电学特性，利用自搭建的电压一电流密度．发光效率测试系统测量了TOLED器件的发光效率。结果表明，与DMS技术相比，EFMS技术可有效抑制对有机功能层的溅射损伤，制备的ITO薄膜表面更平整，晶粒尺寸更细小，而且具有优良的光学和电学性能（400．800mm波长范围的平均透射率为87．1％；方块电阻低至4．56×10^-4Ω·cm）。以该薄膜为阳极的TOLED器件的发光效率显著提高，在3．26mA／cm2的电流密度下发光效率达到0．09lm／W。

The indium-tin-oxide （1TO） layers, deposited by energy-filtering DC magnetron sputtering （EFMS） at room temperature, were used to fabricate top-emitting organic light-emitting diodes （TOLED）. The influence of the nega- tively -charged particles, including secondary electrons, 02- and O - ions on the micmstructures and properties of the 1TO films was investigated. The 1TO coatings were characterized with X-ray diffraction, atomic force microscopy, 4-point probe, ellipsometry, and photo-luminescence spectroscopy. The results show that the energy-filtering significantly improved the microstructures and properties of ITO coatings, and effectively reduced the sputtered damages on TOLED organic function- al layer. For example, when it comes to 1TO synthesis and TOLED fabrication, EFMS outperforms the conventional DMS in many ways, such as the smoother surfaces, smaller grains, lower resistivity （4.56 10-4 Ω cm）, bigger averaged trans- mittance （87.1% ） in 400 - 800 nm range, and a much higher luminous efficiency of TOLED （0.09 lm/W） at a current density of 3.26 mA/cm2.