基于多目标决策方法的反应离子刻蚀机约束环优化设计研究

Design Optimization of Confinement Ring in Reactive Ion Etching Reactor of 450 mm Silicon Wafer

从反应离子刻蚀设备腔室内部结构细节角度出发,研究腔室约束环对以450 mm为代表大晶圆尺寸刻蚀机流场影响。与同类研究相比,本文旨在突出研讨仿真模型的精确性与边界条件比较设置准则的重要性。本文首先介绍刻蚀机腔室约束环的结构及其功能并提出高精度粘度修正的实现方法并计算腔室流体气压分布。提出了腔室气压分布的多目标问题,采用遗传算法求解,并通过多目标决策对优化结果进行评价和排序,得到最适合的优化结果。最后,给出约束环设计结果并得出约束环可以优化腔室内气流分布轮廓的结论。

The impact of the structure of plasma confinement ring in reactive ion etching reactor of 450 nan silicon wafer on the gas flow field distributions was approximated, modeled, and simulated. In the modeling, viscosity correction and better approximated boundary conditions were considered to improve the simulation precision. The gas flow field dis- tributions in the plasma etching chamber was addressed in genetic algorithm, and a variety of the optimized results were e- valuated and ranked in multi-objective decision making method （MODM） for the purpose of design optimization of the plasma confinement ring. The gas flow field distributions, in the confinement ring recently designed by optimization, were simulated by evaluating the simulation model in terms of the optimized variables. The results show that when it comes to the pressure distribution uniformity and average pressure, the newly-developed simulation technique outperforms the con- ventional one.