摘要
The design and fabrication of an ultra-broadband power amplifier based on a GaN HEMT, which operates in the frequency range from 3 to 8 GHz, is presented in this paper. A TGF2023-02 GaN HEMT chip from Tri Quint is adopted and modeled. A novel negative feedback structure is applied in the circuit. The measured results show that the amplifier module has a wide range frequency response that is almost consistent with those of simulation at frequencies from 3 to 6.5 GHz. The measured power gain is greater than 7 dB between 3 and 6.5 GHz.The saturated output power is 38.5 dBm under DC bias of Vds =D28 V, Vgs D =-3：5 V at the frequency of 5.5 GHz.
The design and fabrication of an ultra-broadband power amplifier based on a GaN HEMT, which operates in the frequency range from 3 to 8 GHz, is presented in this paper. A TGF2023-02 GaN HEMT chip from Tri Quint is adopted and modeled. A novel negative feedback structure is applied in the circuit. The measured results show that the amplifier module has a wide range frequency response that is almost consistent with those of simulation at frequencies from 3 to 6.5 GHz. The measured power gain is greater than 7 dB between 3 and 6.5 GHz.The saturated output power is 38.5 dBm under DC bias of Vds =D28 V, Vgs D =-3：5 V at the frequency of 5.5 GHz.
基金
supported by the Natural Science Foundation of Zhejiang Province(No.Z1110937)
