摘要
利用分子束外延技术,通过反射式高能电子衍射仪实时监控InGaAs薄膜生长状况,在InAs(001)基片上生长In0.86Ga0.14As,在GaAs(001)基片上生长In0.14Ga0.86As(厚度均为20原子层)单晶薄膜。采用扫描隧道显微镜对原位退火后的InGaAs样品进行扫描,发现不同组分的InGaAs呈现不同的表面形貌。虽然生长的初始表面都是原子级平坦,但是由于晶格常数差异触发不同类型的表面应力,促使In0.14Ga0.86As/GaAs薄膜中台阶边缘平滑扭曲,而在In0.86Ga0.14As/InAs薄膜表面台阶却呈锯齿状;同时,由于不同类型表面应力的作用,低In组分薄膜形成更多的二维(2D)岛。
The growth of InGaAs film is monitored by RHEED in a Omicron MBE system.In0.86Ga0.14As films with thickness of 20 ML are grown on InAs（001）substrates,and In0.14Ga0.86As films with thickness of 20 ML are grown on GaAs（001）substrates.In situ annealed InGaAs samples on different substrates are observed by scanning tunneling microscopy（STM）,the results show that both of the substrates are atomically flat,however,the step edges of In0.14Ga0.86As/GaAs film become smooth and distorted,the jagged step edges of In0.86Ga0.14As/InAs become more obvious by the surfaces stress which formed by different lattice constant of the InGaAs films on different substrates,as the thickness increasing.With the effect of different surface stress,more 2Dislands formed in In0.14Ga0.86As/GaAs film.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2015年第2期21-23,37,共4页
Materials Reports
基金
国家自然科学基金(60866001)
教育部博士点基金(20105201110003)
贵州省自然科学基金(20132092
黔科合J字[2014]2046号)
