摘要
采用热阴极直流辉光等离子体CVD方法,在氩气/甲烷/氢气混合气氛中制备出纳米晶金刚石膜,研究不同氩气/氢气流量比对纳米晶金刚石膜沉积的影响。对样品形貌的SEM测试表明,随着氩气与氢气流量比由40/160增加到190/10,膜中金刚石晶粒尺寸由约600nm减小到约30nm。金刚石膜Raman谱中金刚石特征峰逐渐减弱,石墨G峰逐渐增强,反式聚乙炔特征峰及其伴峰强度加大。等离子体光谱分析表明C2是生长纳米晶金刚石膜的主要活性基团。
Nanocrystalline diamond films with different grain sizes were synthesized on Si substrate by hot catho-de direct current plasma chemical vapor deposition method with different compositions of CH4/Ar/H2 gas mixture. The effect of flux ratio of Ar/H2 on deposition process of nanocrystalline diamond films was investigated. The morphology and microstructure of the samples were characterized by SEM and Raman scattering. The results indicated that with Ar/H2 gas flux ratio increasing from 40/160 to 190/10, the diamond′s grain size decreased from -600 nm to -30 nm, and Raman intensity of diamond （1332 cm^-1） peak decreased, while G peak of graphite at 1580 cm^-1 and the peak at -1130 cm^-1 and its companion peak （-1470 cm^-1） assigned to sp2 C species of trans-polyacetylene at grain boundaries increased gradually. The spectral analysis of the plasma indicated that the C2 is the main active group response for the growth of nanocrystalline diamond films.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2015年第4期6-9,17,共5页
Materials Reports
基金
国家自然科学基金(51262007
11364015)
海南师范大学物理学科拟建硕士点资助项目(20140092102
20130282202)
