一种抗单粒子翻转的D触发器

Study on A SEU-Hardened D Flip-Flop

以互锁存储单元(DICE)结构为基础,采用0.35μm CMOS工艺,设计了一种具有抗单粒子翻转的带置位端的D触发器。通过将数据存放在不同节点以及电路的恢复机制,使单个存储节点具有抗单粒子翻转的能力。通过Spectre仿真,测试了触发器的抗单粒子翻转能力。在版图设计中采用增大敏感节点距离和MOS管尺寸的方法进一步提高了D触发器抗单粒子翻转的能力。

Based on dual interlocked storage cell （DICE ）architecture,0.35μm CMOS process is used to design a D flip -flop which is immune to single -EVENT upset with set control.Through recovery mechanism of the circuit single event effect,the single event upset （SEU）immunity is achieved by storing data on different nodes.SEU of the circuit is simulated by Spectre.In the layout design,the methodology such as increasing distance between sensitive nodes and size of MOS transistors,is used to further improve ability immune to single -EVENT upset.