摘要
随着薄膜体声波谐振器(FBAR)工作频率及FBAR器件集成度的不断提高,FBAR器件的电磁干扰问题显得尤为突出。常用电学模型和有限元模型都假定FBAR中的电磁场为无源准静态场,无法仿真模型的相关电磁特性。使用HFSS高频电磁仿真软件建立了FBAR的三维电磁仿真模型,采用一个包含声场特性的等效介电常数,实现了FBAR电磁场分布、电磁场耦合与压电效应的一体化仿真。分析了高频电磁场分布及电磁场耦合对谐振特性的影响,通过优化FBAR与临近元件的间距及采用不同介电常数的基板材料,减小了电磁场耦合的干扰。
With the increasing of resonant frequency and integration of thin film bulk acoustic resonator（FBAR）,the electromagnetic interference（EMI）of FBAR devices appears to be extremely important.The electric fields of the common electrical model and finite element model are assumed to be quasi-static and cannot simulate the electromagnetic（EM）property.A 3-D EM model of FBAR is established by means of high frequency EM simulation software HFSS.A integrated simulation of EM distributed effects,EM coupling and piezoelectric effects is achieved by employing an effective permittivity in the EM model.The effects of the high frequency EM distributed effects and the EM coupling on resonant characteristics are analyzed.By optimizing the distance between FBAR and components,introducing substrate materials with different permittivity,the EM coupling interference is effectively reduced.
出处
《压电与声光》
CSCD
北大核心
2015年第1期1-5,共5页
Piezoelectrics & Acoustooptics
基金
中国工程物理研究院超精密加工技术重点实验室基金资助项目(ZZ14001
2012CJMZZ00009)
重庆大学新型微纳器件与系统技术国防重点学科实验室访问学者基金资助项目(2013MS04)
西南科技大学制造过程测试技术省部共建教育部重点实验室开放课题基金资助项目(11ZXZK03)
西南科技大学研究生创新基金资助项目(13ycjj31
13ycjj36)
