半导体激光器参数的外腔法测量

Measurement of parameters of semiconductor lasers via operating in an external cavity

通过测量运行在外腔中的半导体激光器的P-I(功率电流)曲线,可以确定二极管激光器的重要参量——吸收系数α、对电流的微分小信号增益系数dg/dI以及光子寿命等。

Measurement of P-I (power-current) curves of the semiconductor laser in an external cavity may lead to the determination of such diode parameters as the absorption coefficient a, the differential small signal gain coefficient dg/dI and the photon lifetime τ. As a result, a simple and easy method has been proposed to designate some important parameters of semiconductor lasers.