基于无催化剂化学气相沉积法的氮化镓纳米线制备和表征

SYNTHESIS AND CHARACTERIZATION OF GaN NANOWIRES BY THE CATALYST-FREE CHEMICAL VAPOR DEPOSITION METHOD

采用化学气相沉积法,通过金属镓和氨气的直接反应,在石英衬底上沉积出GaN纳米线。利用XRD和SEM对制备的GaN纳米线进行了结构和形貌的表征。结果表明合成的GaN纳米线为六方纤锌矿结构,直径为100~200 nm,长度达几微米,GaN纳米线的生长符合VLS生长模型。室温PL光谱表明GaN纳米线在395 nm和566 nm的发光峰主要与Ga空位或者N空位引起的缺陷能级相关。

GaN Nanowires were deposited on quartz substrate by direct reaction of the metal gallium and ammonia using the CVD method. The structure and the morphologies of GaN nanowires were characterized by XRD and SEM. The nanowires were hexagonal wurtzite structure with diameters ranging from 100 nm to 200 nm and lengths of about several microns. The growth of GaN nanowires is governed by a VLS growth mechanism. The room temperature photoluminescence（PL） measurements show that the emission at 395 nm and 566 nm mainly are related by defect levels, which are caused by the Ga vacancy and N vacancy.