旋转对Cz法硅晶生长过程中热输运和熔体流动影响的数值模拟

Numerical Simulation on the Effect of the Rotating on the Heat Transfer and Melt Flow during the Silicon Crystal Growth Process by Cz Method

建立了一个120 kg单晶炉的二维轴对称全局模型,分别对无旋转、加入晶体旋转、加入坩埚旋转、同时加入晶体旋转和坩埚旋转的四种工况展开了数值模拟研究。得到了晶体旋转及坩埚旋转对晶体生长过程的拉晶功率、炉内温度分布和熔体流动的影响;得到了不同晶体长度下拉晶炉内的温度分布以及熔体流动的变化规律。结果显示,加入晶体旋转对晶体生长过程的拉晶功率、温度分布和熔体流动的影响小于坩埚旋转的影响;随着晶体长度的增加,晶体旋转及坩埚旋转对温度分布和熔体流动的影响不断减小。因此在单晶炉设计和优化过程中应考虑整个晶体生长过程。

A two-dimensional axial symmetric global model of 120 kg single-crystal furnace was developed to simulate the four working conditions of without rotating,crystal rotating,crucible rotating,both crystal and crucible rotating. The effect of rotation on the growth power,temperature distribution and melt flow during the crystal growth were obtained; the variation trends of the temperature distribution and melt flow change as the crystal length increasing were also obtained. The result shows that the effect of the crystal rotating on the growth power,temperature distribution and melt flow is less-than the crucible rotating; the effect of the rotation on the temperature distribution and melt flow decreases as the crystal length increasing. Therefore,it is important to concern the whole crystal growth process during the designing and optimization of the furnace.