适用于非晶氧化锌薄膜晶体管的表面势紧凑模型

A Compact Model Available for the Surface Potential of Amorphous Zinc Oxide Thin-film Transistors

基于泊松方程和高斯定理,采用非迭代算法,在考虑非晶氧化锌薄膜晶体管(Amorphous zinc oxide thin film transistors,a-ZnO TFTs)带隙能态的指数带尾态和深能态的完整分布条件下,解析地建立了a-ZnO TFTs的表面势紧凑模型。与数值迭代算法的计算结果进行比较,该紧凑模型的绝对误差低至10-5 V数量级,且提高了计算效率;与其它实验拟合的陷阱态密度结果对比,进一步验证了模型的正确性。最后,提出的表面势紧凑模型可适用于a-ZnO TFTs器件漏电流模型的建构及其电路的仿真应用。

Based on Poisson′s equation and Gauss′s law,a compact model for the surface potential of amorphous zinc oxide（a-ZnO）thin-film transistors（TFTs）has been derived in this paper,which adopts the non-iterative computations and considers both the exponential band-tail and deep states distributions of a-ZnO TFTs.Compared with the calculated results of numerical iterative,the absolute errors of proposed model can attain 10^-5 V range,and the computational efficiency can also be improved.Compared with the other fitting experimental results of trap density of states（DOS）,the accuracy of the proposed model has been further verified.At last,the compact model based on surface potential is available for the model establishment of a-ZnO TFTs and the application of circuit simulation.