摘要
提出了一种适合于低电源电压嵌入式闪存系统的高速高抗干扰能力的灵敏放大器。讨论了应用在这个灵敏放大器中的多相位预充、自调节负载及新型的箝位技术。提出的灵敏放大器电路在0.18μm的嵌入式闪存平台上实现。测试结果表明:提出的灵敏放大器达到9ns的访问时间。
In this paper,a new high speed and high noise immunity sense amplifier circuit is proposed.Novel techniques of pre-charging,self-regulation and clamping are adopted to improve access speed and noise immunity under low power supply.The circuit is implemented in 0.18μm CMOS compatible embedded flash technology.Testing results show that the proposed sense amplifier could reach 9ns access time.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2015年第1期94-99,共6页
Research & Progress of SSE
