摘要
In the terahertz（THz） regime,the active region for a solid-state detector usually needs to be implemented accurately in the near-field region of an on-chip antenna.Mapping of the near-field strength could allow for rapid verification and optimization of new antenna/detector designs.Here,we report a proof-of-concept experiment in which the field mapping is realized by a scanning metallic probe and a fixed AlGaN/GaN field-effect transistor.Experiment results agree well with the electromagnetic-wave simulations.The results also suggest a field-effect THz detector combined with a probe tip could serve as a high sensitivity THz near-field sensor.
In the terahertz（THz） regime,the active region for a solid-state detector usually needs to be implemented accurately in the near-field region of an on-chip antenna.Mapping of the near-field strength could allow for rapid verification and optimization of new antenna/detector designs.Here,we report a proof-of-concept experiment in which the field mapping is realized by a scanning metallic probe and a fixed AlGaN/GaN field-effect transistor.Experiment results agree well with the electromagnetic-wave simulations.The results also suggest a field-effect THz detector combined with a probe tip could serve as a high sensitivity THz near-field sensor.
基金
partially supported by the Knowledge Innovation Program of the Chinese Academy of Sciences(Grant No.KJCX2-EW-705)
China Postdoctoral Science Foundation(Grant No.2014M551678)
Jiangsu Planned Projects for Postdoctoral Research Funds(Grant No.1301054B)
Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YZ201152)
the National Natural Science Foundation of China(Grant No.61271157)
Suzhou Science and Technology Project(Grant No.ZXG2012024)
the Chinese Academy of Sciences Visiting Professorship for Senior International Scientists(Grant No.2010T2J07)
