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WiMAX/LTE射频收发机中低功耗VCO的设计 被引量：2

Design of a Low Power VCO for WiMAX/LTE RF Transceiver
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摘要 采用互补型交差耦合结构,设计了一个可工作于WiMAX（IEEE 802.16e,2.469~2.69GHz）和LTE（2 496~2 690 MHz）无线射频收发机的压控振荡器（VCO）。采用TSMC 0.18μm CMOS工艺对VCO电路进行设计及仿真。仿真结果表明,在1.2V电源电压下,压控振荡器的功耗为1.44mW,振荡频率变化范围为2.43~2.69GHz,可调范围约为10.15%,相位噪声为-120.4dBc/Hz@1 MHz,FOM为-186.9,满足WIMAX/LTE无线通信系统的要求。 Based on complementary cross-coupled structure,a voltage controlled oscillator for WiMAX（IEEE802.16 e,2.469-2.69GHz）and LTE（2 496-2 690MHz）RF transceiver was proposed.The VCO was designed and simulated with TSMC 0.18μm CMOS process.The simulation results showed that the power consumption was1.44 mW from a 1.2Vsupply voltage,the oscillation frequency range was from 2.43 GHz to 2.69 GHz,the tuning range was about 10.15%,the phase noise was-120.4dBc/Hz at 1MHz offset frequency,the FOM was-186.9.The proposed VCO could meet the requirements of WIMAX/LTE wireless communication systems.
作者 王巍 梁耀 赵辰 蔡文琪 莫啸 袁军 王冠宇
机构地区 重庆邮电大学光电工程学院
出处 《微电子学》 CAS CSCD 北大核心 2015年第1期54-57,62,共5页 Microelectronics
关键词 射频收发系统 压控振荡器 互补型交差耦合结构 RF transceiver VCO Complementary cross-coupled structure
分类号 TN753.9 [电子电信—电路与系统]
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参考文献10

  • 1LIU C H, WANG R L, CHEN C Y, et al. A multi- band current-reused VCO for 2.5 GHz and 3.4 GHz WiMAX applications [C] // 3rd Int Conf Innovative Comput Inform Control. Dalian, China. 2008: 236- 239.
  • 2KAO C Y, YANG J R. A fully integrated multi-band VCO design with capacitive coupling for WLAN/ WiMAX applications [C] // ICMMT. Nanjing, China. 2008: 1491-1494.
  • 3邓翔,段吉海,杨丽燕,李石林.5GHz0.18μm CMOS宽带LC VCO[J].微电子学,2012,42(3):372-375. 被引量：3
  • 4WU J M, CHOU S, HONG Z C. A SiGe voltage controlled oscillator for 4G LTE applications [C] // Rogress Electromag Resear Syrup Proceed. Moscow, Russia. 2012: 923-926.
  • 5GREBENNIKOV A. RF and microwave transistor oscillator design [M]. Berlin: Wiley, 2007.
  • 6GREBENNIKOV A. RF and microwave power amplifier design [M]. New York.. McGraw-Hill, 2004.
  • 7ZHOU W, CHEN X, DAI K, et al. Switched inductor VCO based on tapped vertical solenoid inductors [J]. Elec Lett, 2012, 48(9): 509-511.
  • 8TANG X, HUANG F, SHAO M, et al. A wide band0. 13 μm CMOS LC-VCO for IMT-advanced and UWB applications [J]. J Semicond, 2013, 34(1): 015004-1.
  • 9CAO SG, HANK F, TAN X, et al. A 1. 0 V differential VCO in 0.13 μm CMOS technology.
  • 10KIMC H, SHIN SH, YOO HJ. Alow phase noise and low power series coupled quadrature VCO using reconfigurable LC tank [C] // IEEE Radio Wireless Symp. Orlando, FL, USA. 2008: 395-398.

二级参考文献7

  • 1CHUEHTC, CHENW H, HUANGDR. A0.13 txm CMOS A-E; fractional-N synthesizer for WiMAX application [C] // 4th Europ Microwave Integr Circ Conf. Rome, Italy. 2009:543 546.
  • 2ELSAYED A, Aid A, ELMASRY M I. Differential PLL for wireless applications using differential CMOS LC-VCO and differential charge pump [C]//Proc Int Syrup Low Power Design. San Diego, CA, USA. 1999:243- 248.
  • 3KIM J, SHIN J, KIM S, et al. A wide-band CMOS LC VCO with linearized coarse tuning characteristics[J]. IEEE Trans Circ Syst Ih Exp Brief, 2008, 55 (5) : 399-403.
  • 4CHECKA N, WENTZLOFF D, CHANDRAKASAN A, et al. The effect of substrate noise on VCO per- formance [C] // 2005 IEEE Rad Freq Integr Circ Symp - Dig Pap. Long Beach, CA, USA. 2005: 523- 526.
  • 5ANDREANI P, SJOLAND H. Tail current noise sup- pression in RF CMOS VCOs [J]. IEEE J Sol Sta Circ, 2002, 37(3): 342-348.
  • 6DUAN J H, QIN C. A fully integrated VCO in 0. 18- μm CMOS technology for a bluetooth transceiver [C] // 1st Asia Pacific Conf Postgrad Research in Micro- elec Elec, PrimeAsia 2009. Shanghai, China. 2009: 41-44.
  • 7DUAN J H, LIJ P, QIN C. A2.5 GHz low phase noise LC VCO for WLAN applications in 0. 18-μm CMOS technology [C]//Proe 3rd IEEE Int Syrup Mi- crowave, Anten, Propag EMC Technol Wireless Com- mun. Beijing, China. 2009: 998-1001.

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微电子学
2015年 第1期

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