石墨烯∶聚合物复合薄膜的图形化制备与非易失性存储性能研究

Fabrication and nonvolatile memory performance of patterned graphene∶polymer composite film

采用旋涂技术、光刻技术、蒸发镀膜技术制备以图形化石墨烯∶聚合物复合薄膜为活性层,具有氧化铟锡/石墨烯∶聚合物/铝交叉型夹层结构的阻变器件。采用光刻胶为有机基体,实现阻变层的可图形化;通过优化石墨烯浓度,获得具有优良性能的可擦写非易失性阻变存储器件,讨论其阻变机制。实验表明,当石墨烯浓度为0.01%(质量分数)时,器件具有最佳的阻变特性,其开关比达8.9×103,且表现出良好的数据维持能力。

Resistance memory devices using patterned graphene∶polymer as active layerand with ITO(indium tin oxide)/graphene∶polymer/Al cross bar sandwich structure were fabricated by spin-coating,lithography and thermal evaporation.The patterned active layer was achieved by using photosensitive polymer as organic matrix.The graphene concentration was optimized to obtain the best rewritable nonvolatile memory effect.The mechanism for the resistance switch effect was also discussed.It was found that the device fabricated with the graphene concentration at 0.01wt% showed not only the best memory performance with a large on/off ratio of8.9×103,but also satisfactory retention characteristics.Current-voltage analyswas suggests that it was the carriers captured and released by graphene that lead to the resistance switch effect.