低压化学气相沉积法生长B掺杂ZnO薄膜及其性能

Structural,optical and electrical properties of B doped ZnO films deposited by low pressure chemical vapor deposition

低压化学气相沉积法生长的 B 掺杂 ZnO 薄膜具有良好的光散射特性，可以用作硅基薄膜太阳能电池的前电极.以 Zn （C2 H 5）2和 H 2 O 为前驱体， B2 H 6为掺杂物，通过低压化学气相沉积法在玻璃衬底上生长了 B 掺杂 ZnO 薄膜.通过 XRD、FESEM、四探针测试仪等手段对样品的结构特征、微观形貌及导电性能进行表征，着重研究了（110）取向的 BZO 薄膜的生长机理.结果表明，厚度在500 nm 以下的 BZO 薄膜主要表现为（002）取向，随着厚度的增加，薄膜取向开始向（110）转变.所得 BZO 镀膜玻璃在400-1000 nm范围内总透过率＞80％，雾度最高可达28％（550 nm），方块电阻最低约7Ω/□，电阻率最低约1．0×10^-3Ω·cm.

Transparent conductive B doped ZnO(BZO)film grown by low pressure chemical vapor deposition(LPCVD)has been emerging as an efficient light scattering front electrode for thin film silicon solar cells.In the study,high quality BZO films were grown on glass substrates by LPCVD using Zn(C2H5)2,H2 O as precursors and B2H6 as the dopant.The crystalline structure,morphology and electrical properties were characterized by X-ray diffraction(XRD),field-emitting scanning electron microscope(FESEM)and four-probe method.The results show that the thinner films(<500nm)exhibit(002)preferred orientation,while the crystal orientation evolves to(110)with the increase of film thickness.The BZO coated glasses exhibit high transmittance(about 80%)in the visible and near-infrared range,and the(110)oriented BZO films present significant diffusive transmittance with the haze(at 550nm)up to 28%.The BZO films with sufficient thickness show good conductivity with sheet resistance down to about 7Ω/□ and resistivity down to about 1.0×10-3Ω·cm.