磁控溅射WO_3薄膜的制备及其NO_2气敏特性研究

Preparation and NO_2 sensing of sputtered WO_3 thin films

采用直流反应磁控溅射法，在室温条件下通过改变放电气体压强制备出具有不同膜密度的 WO3薄膜。结构表征结果表明，由单斜晶 WO3纳米颗粒组成的薄膜具有层状结构，随着放电气体压强的增加，膜密度呈下降趋势。气敏特性研究结果表明，由 WO3薄膜制备而成的气体传感器在工作温度为200℃时获得对NO2气体的最大灵敏度，并在50-300℃的工作温度范围内对 NO2气体均展现出良好的气敏特性。在相同的检测条件下，气体灵敏度随着膜密度的减少而增加。

WO3thin films with different film densities were deposited under various discharge gas pressures at room temperature using dc reactive magnetron sputtering.Structural characterization shows that the films with a layered structure are composed of monoclinic WO3 nanograins.The film density was decreased with increasing discharge gas pressure.Gas sensors based on WO3 thin films obtain the highest response at 200℃and show reversible response to NO2 gas at the operating temperature of 50-300 ℃.The response was increased with decreasing film density under the same conditions.