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基于粒子群优化算法的器件模型表面势求解 被引量:1

Solution of device model surface potential with particle swarm optimization algorithm
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摘要 在研究器件建模和粒子群优化算法的基础上,提出了基于粒子群优化算法的器件模型表面势求解,从而建立整套模型参数。在粒子群优化算法的程序实现上,采用JAVA面向对象语言,封装粒子对象,进化中的粒子个体不断接近最优解。之后对经典的器件模型表面势方程进行了测试,证明了粒子群优化算法在器件建模方面的可行性。 Based on the research on device modeling and particle swarm optimization algorithm, proposes a solution of particle swarm optimization algorithm for device model surface potential, so as to establish a complete set of model parameters. On the particle swarm optimization algorithm program implementation, using JAVA object-oriented language, encapsulating particles,evolutionary particle individual is constantly close to the optimal solution. The classic device model surface potential equation was tested, and proved the feasibility of the particle swarm optimization algorithm in terms of device modeling.
作者 马晓峰
出处 《计算机时代》 2015年第3期1-3,共3页 Computer Era
关键词 粒子群优化算法 器件模型 表面势 JAVA particle swarm optimization device model surface potential JAVA
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参考文献4

  • 1Kennedy J, Eberhart R C. Particle Swarm Optimization[J]. IEEE Int'l Conf, 1995.4(1): 1942-1948.
  • 2Eberhart R C,Kennedy J.A New Optimizer Using Particle Swarm Theory[M]. Nagoya:Proceedings of the Sixth International Symposium on Micro Machine and Human Science,1995: 39-44.
  • 3沈长云.计算智能[J].武汉船舶技术信息,1996(5):9-10. 被引量:1
  • 4吕彬义,孙玲玲,孔月婵,陈辰,刘军,陈磊.基于表面势的HEMT模型分析[J].半导体技术,2010,35(4):320-324. 被引量:1

二级参考文献8

  • 1ANDERSON R L.Germanium-gallium-arsenide heterojunctions[J].IBM J Res and develop,1960(4):283-287.
  • 2DELAGEBEAUDEUF D,LINH N T.Charge contml of the heterojunction two-dimensional electron gas for MESFET[J].IEEE Trans on ED,1981,28:790.
  • 3DELAGEBEAUDEUF D,LAVIRON M,DELESCLUSE P,et al.Metal-(n) AIGaAs-GaAs two-dimensional electron gas FET[J].EL,1982,18,(2):103-105.
  • 4LEE K,SHUR M S,DRUMMOND T J,et al.Current-voltage and capacitance-voltage characteristies of modulation-doped field-effect transistors[J].IEEE Trans on ED,1983,30:207.
  • 5KARMALKAR S.A new equivalent MOSFET representation of a HEMT to analytically model nonlinear charge control for simulation of HEMT devices and circuits[J].IEEE Trans on ED,1997,44:862-868.
  • 6PIERRET R F,LUNDSTROM M S.Correspondence between MOS and modulation-doped structures[J].IEEE Trans on ED,1984,3l:383-385.
  • 7SASIC R,RAMOVIC R,TJAPKIN D.A simple 2D analytical model of HEMT[C]//Proe of 20th Int Conf 0n Microelectronic.Nis,Yugoslavia,1997:709-712.
  • 8RARMALKAR S,KARMALKA S.HEMT modeling using semi-physical expressions for equilibrium space-charge parameters of the modulation-doped heterojunction[J].IEEE Proc-Cicuits Devices Syst,1999,146:211-214.

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